The data sheet for an E-MOSFET gives ID (on) = 3 mA at VGS = 10V and VGS (th)= 3V. Determine the drain current for VGS = 5V. The data sheet for an E-MOSFET gives ID(on) = 500 mA at VGS = 10V and VGS (th) = 1V. drain-to-source voltage VDS and (ii) a.c. The D-MOSFET used in the amplifier of Fig. The MOSFET data sheet gives VGS (off) = – 8V and IDSS = 12 mA. Determine the drain-to-source voltage (VDS) in the circuit shown in Fig. Thus we have a number of VGS – ID readings so that transconductance curve for the device can be readily plotted. We can locate more points of the curve by changing VGS values. This locates two points viz IDSS and VGS (off) on the transconductance curve. When VGS = 0 V, ID = IDSS = 1 mA and when VGS = VGS (off), ID = 0A. How will you plot the transconductance curve for the device? A D-MOSFET has parameters of VGS (off) = – 6V and IDSS = 1 mA. (i) Is this an n-channel or a p-channel ? For a certain D-MOSFET, IDSS = 10 mA and VGS (off) = – 8V. 16, calculate the voltage gain with (i) RS bypassed by a capacitor (ii) RS unbypassed. For the JFET amplifier circuit shown in Fig. Therefore, voltage gain is reduced when RS is unbypassed. Thus with unbypassed RS, the gain = 1.85 whereas with RS bypassed by a capacitor, the gain is 6. Given gm = 4 mS RD = 1.5 kΩ and RS = 560Ω. In a JFET amplifier, the source resistance RS is unbypassed. drain resistance RAC changes due to the connection of load RL (= 4.7 kΩ). coupled to the output of the amplifier in Fig. 14? The IDSS = 8 mA, VGS (off) = – 10V and ID = 1.9 mA. output voltage of the unloaded amplifier in Fig. Calculate the voltage gain of the amplifier. The transconductance of a JFET used as a voltage amplifier is 3000 μmho and drain resistance is 10 kΩ. If the source resistance RS is very small as compared to RG, find the voltage gain of the amplifier. load line for the JFET amplifier shown in Fig. The parameters of JFET are IDSS = 10 mA and VGS (off) = – 5 V. If VDD = 30 V, R1 = 1 MΩ and R2 = 500 kΩ, find the value of RS. In an n-channel JFET biased by potential divider method, it is desired to set the operating point at ID = 2.5 mA and VDS = 8V. Determine ID and VGS for the JFET with voltage-divider bias in Fig. ![]() The JFET parameters are IDSS = 5 mA and VGS (off) = − 2 V. In a self-bias n-channel JFET, the operating point is to be set at ID = 1.5 mA and VDS =10 V. The voltage VD should be 6V (one-half of VDD). The JFET parameters are : IDSS = 15 mA and VGS (off) = – 8V. 6 to set up an approximate midpoint bias. Determine the value of RS required to self-bias a p-channel JFET with IDSS = 25 mA, VGS (off) = 15 V and VGS = 5V. The transfer characteristic of a JFET reveals that when VGS = – 5V, ID = 6.25 mA. Since there is no gate current, there will be no voltage drop across RG. Determine the values of VGS, ID and VDS for the circuit. 4 has values of VGS (off) = – 8V and IDSS = 16 mA. ![]() Determine the transconductance for VGS = – 4V and find drain current ID at this point. The datasheet of a JFET gives the following information: IDSS = 3 mA, VGS (off) = – 6V and gm (max) = 5000 μS. When VGS of JFET changes from –3.1 V to –3 V, the drain current changes from 1 mA to 1.3 mA. Find the resistance between gate and source. When a reverse gate voltage of 15 V is applied to a JFET, the gate current is 10−3 μA. The drain current for the circuit is given by ![]() Determine the value of drain current for the circuit shown in Fig.
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